Expert Details
Semiconductors, Including Laser, LED, Photovoltaics, Detectors, Epitaxy, Process, Nanotechnology
ID: 728774
United Kingdom
Education
Year | Degree | Subject | Institution |
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Year: 1990 | Degree: PhD | Subject: Physics | Institution: University of Sheffield |
Year: 1984 | Degree: BSc | Subject: Physics | Institution: University of Birmingham |
Work History
Years | Employer | Title | Department |
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Years: 2002 to Present | Employer: Undisclosed | Title: Professor | Department: Electronic and Electrical Engineering |
Responsibilities:Expert is head of a research group which produced III-V optoelectronic devices by epitaxy |
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Years | Employer | Title | Department |
Years: 1998 to 2002 | Employer: Marconi PLC | Title: Senior Process Engineer | Department: Microwave Devices Division |
Responsibilities:Head of Epitaxial materials production. |
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Years | Employer | Title | Department |
Years: 1997 to 1998 | Employer: University of Minnesota | Title: Visiting Professor | Department: Electronics and Computer Science |
Responsibilities:Research and development of advanced semiconductor laser structures. |
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Years | Employer | Title | Department |
Years: 1990 to 1998 | Employer: University of Sheffield | Title: Senior Researcher | Department: Electronic Engineering |
Responsibilities:Senior research fellow on III-V devices. |
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Years | Employer | Title | Department |
Years: 1986 to 1990 | Employer: University of Warwick | Title: Researcher | Department: Physics |
Responsibilities:Research associate on SiGe epitaxy. |
Additional Experience
Training / Seminars |
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Lecturing on high speed devices, semiconductor physics, semiconductor packaging and professional skills for electronic engineering. |
Vendor Selection |
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Involved with major tenders for the purchase of equipment. |
Marketing Experience |
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Substantial knowledge of the compound semiconductor industry. Frequent contributing writer to trade magazines. |
Fields of Expertise
amorphous semiconductor, binary semiconductor material, discrete semiconductor device, doped semiconductor, gallium arsenide semiconductor, III-V semiconductor material, indium antimony, indium arsenic, indium gallium arsenide phosphide laser diode, injection laser, light-emitting diode, quantum well laser, semiconductor growth, semiconductor laser, semiconductor material, semiconductor material characterization, semiconductor material manufacturing, semiconductor material property, semiconductor material selection, semiconductor technology, semiconductor wafer, ternary semiconductor material, wide band gap semiconductor material, semiconductor bakeout, blue semiconductor laser, semiconductor industry chemical, semiconductor flat pack, semiconductor micropositioning system, bipolar complementary metal-oxide semiconductor technology, semiconductor wafer measurement, semiconductor imaging critical dimension, semiconductor wafer contact etching, semiconductor device testing, semiconductor device packaging material, semiconductor device package reliability, metal-semiconductor-metal photodetector, integrated-circuit package, semiconductor device package, soft semiconductor mask, hard semiconductor mask, memory packaging, laser diode modulation, semiconductor dopant lateral diffusion, semiconductor wafer backside metallizing, proximity aligner, semiconductor wafer epitaxial deposition, compound semiconductor material, semiconductor economics, gallium arsenide integrated circuit, semiconductor wafer fabrication facility, rapid thermal semiconductor wafer processing, semiconductor strength, semiconductor device failure, semiconductor etching, semiconductor wafer processing, semiconductor wafer dicing, intrinsic semiconductor, semiconductor inversion layer, semiconductor cluster-tooling processing, semiconductor solid mechanical property, power semiconductor device quality improvement, semiconductor device reliability, diode laser spectroscopy, semiconductor process modeling, II-VI semiconductor material, semiconductor product quality management, semiconductor product quality assurance, power semiconductor device, complementary metal-oxide semiconductor device, semiconductor device manufacturing, high-frequency semiconductor, semiconductor die, photoconductive material, negative metal-oxide semiconductor material, metal-oxide semiconductor material, limited space charge accumulation diode, metal-oxide semiconductor field-effect transistor, metal-oxide semiconductor device, semiconductor lithography, solid-state relay, semiconductor rectifier, photoelectric cell, semiconductor metallizing, semiconductor diode, semiconductor device, semiconductor passivation, metal-insulator semiconductor material, microwave integrated circuit, metal-insulator semiconductor device, semiconductor mask, integrated logic circuit, Gunn device, germanium rectifier, field-effect integrated circuit, central processing unit, avalanche photodiode