Intellex Acquires Expert by Big Village

We're thrilled to announce that Intellex has acquired Expert by Big Village, effective March 22, 2024. This strategic move enhances our capabilities and strengthens our commitment to delivering exceptional solutions to our customers.

Stay tuned for more updates on how this acquisition will benefit our clients and experts.

For inquiries or more information, please contact us at info@intellex.com.

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Expert Details

Semiconductors, Including Laser, LED, Photovoltaics, Detectors, Epitaxy, Process, Nanotechnology

ID: 728774 United Kingdom

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Expert has 20+ years eperience in compound semiconductor epitaxy, process and measurement, in particular with respect to optoelectronic devices (Laser, LED, photodectors, photovoltaics etc). Expert has published over 450 papers on such mterials and their device applications. Major areas of knowledge include arsenide and antimonide materials for IR applications, including telecommunication ans sensing/military applications. He also has experience in wide gap semiconductors and also on amorphous/polycrystalline materials (PhD on amorphous silicon). Expert. Expert has a very wide knowledge of materials selection and process equipment solutions within the wider semiconductor industry and a good overall up-to-date knowledge of both industry developments and the latest research results.

Education

Year Degree Subject Institution
Year: 1990 Degree: PhD Subject: Physics Institution: University of Sheffield
Year: 1984 Degree: BSc Subject: Physics Institution: University of Birmingham

Work History

Years Employer Title Department
Years: 2002 to Present Employer: Undisclosed Title: Professor Department: Electronic and Electrical Engineering
Responsibilities:
Expert is head of a research group which produced III-V optoelectronic devices by epitaxy
Years Employer Title Department
Years: 1998 to 2002 Employer: Marconi PLC Title: Senior Process Engineer Department: Microwave Devices Division
Responsibilities:
Head of Epitaxial materials production.
Years Employer Title Department
Years: 1997 to 1998 Employer: University of Minnesota Title: Visiting Professor Department: Electronics and Computer Science
Responsibilities:
Research and development of advanced semiconductor laser structures.
Years Employer Title Department
Years: 1990 to 1998 Employer: University of Sheffield Title: Senior Researcher Department: Electronic Engineering
Responsibilities:
Senior research fellow on III-V devices.
Years Employer Title Department
Years: 1986 to 1990 Employer: University of Warwick Title: Researcher Department: Physics
Responsibilities:
Research associate on SiGe epitaxy.

Additional Experience

Training / Seminars
Lecturing on high speed devices, semiconductor physics, semiconductor packaging and professional skills for electronic engineering.
Vendor Selection
Involved with major tenders for the purchase of equipment.
Marketing Experience
Substantial knowledge of the compound semiconductor industry. Frequent contributing writer to trade magazines.

Fields of Expertise

amorphous semiconductor, binary semiconductor material, discrete semiconductor device, doped semiconductor, gallium arsenide semiconductor, III-V semiconductor material, indium antimony, indium arsenic, indium gallium arsenide phosphide laser diode, injection laser, light-emitting diode, quantum well laser, semiconductor growth, semiconductor laser, semiconductor material, semiconductor material characterization, semiconductor material manufacturing, semiconductor material property, semiconductor material selection, semiconductor technology, semiconductor wafer, ternary semiconductor material, wide band gap semiconductor material, semiconductor bakeout, blue semiconductor laser, semiconductor industry chemical, semiconductor flat pack, semiconductor micropositioning system, bipolar complementary metal-oxide semiconductor technology, semiconductor wafer measurement, semiconductor imaging critical dimension, semiconductor wafer contact etching, semiconductor device testing, semiconductor device packaging material, semiconductor device package reliability, metal-semiconductor-metal photodetector, integrated-circuit package, semiconductor device package, soft semiconductor mask, hard semiconductor mask, memory packaging, laser diode modulation, semiconductor dopant lateral diffusion, semiconductor wafer backside metallizing, proximity aligner, semiconductor wafer epitaxial deposition, compound semiconductor material, semiconductor economics, gallium arsenide integrated circuit, semiconductor wafer fabrication facility, rapid thermal semiconductor wafer processing, semiconductor strength, semiconductor device failure, semiconductor etching, semiconductor wafer processing, semiconductor wafer dicing, intrinsic semiconductor, semiconductor inversion layer, semiconductor cluster-tooling processing, semiconductor solid mechanical property, power semiconductor device quality improvement, semiconductor device reliability, diode laser spectroscopy, semiconductor process modeling, II-VI semiconductor material, semiconductor product quality management, semiconductor product quality assurance, power semiconductor device, complementary metal-oxide semiconductor device, semiconductor device manufacturing, high-frequency semiconductor, semiconductor die, photoconductive material, negative metal-oxide semiconductor material, metal-oxide semiconductor material, limited space charge accumulation diode, metal-oxide semiconductor field-effect transistor, metal-oxide semiconductor device, semiconductor lithography, solid-state relay, semiconductor rectifier, photoelectric cell, semiconductor metallizing, semiconductor diode, semiconductor device, semiconductor passivation, metal-insulator semiconductor material, microwave integrated circuit, metal-insulator semiconductor device, semiconductor mask, integrated logic circuit, Gunn device, germanium rectifier, field-effect integrated circuit, central processing unit, avalanche photodiode

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