Intellex Acquires Expert by Big Village

We're thrilled to announce that Intellex has acquired Expert by Big Village, effective March 22, 2024. This strategic move enhances our capabilities and strengthens our commitment to delivering exceptional solutions to our customers.

Stay tuned for more updates on how this acquisition will benefit our clients and experts.

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Expert Details

Semiconductor Lasers, Photonic Devices, MOCVD Growth

ID: 712724 Illinois, USA

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Expert has expertise in many aspects of materials (including crystal) growth, characterization, and devices made from compound semiconductors, especially GaAs and related materials. This includes both liquid phase epitaxial growth and and metalorganic chemical vapor deposition of both optical and electronic devices made from GaAs, AlGaAs, InP, and InGaAsP. He is very familiar with epitaxial reactors.

Expert has an ongoing program on the development of MOCVD for the epitaxial growth of compound semiconducter binary, ternary, and quaternary layers for use in quantum well and supperlattice structures and devices. He has published extensively on reactor designs, the growth process itself, and on the electrical and chemical microcharacterization of the resulting structures and interfaces. He is also very knowledgeable of the broader field of chemical vapor deposition.

Much of Expert's research has involved various aspects of semiconductor injection laser and light-emitting diode development. This includes both infrared and visible lasers, pulsed and continuous lasers, high-power lasers and laser arrays, low-power high-performance lasers, and integrable lasers. He has also worked with gallium arsenide lasers. He is an expert on the physics of quantum well heterostructure lasers and strained layer lasers, and has extensive experience in the determination of laser diode reliability. He is also very knowledgeable regarding multiple quantum well lasers, and of buried heterostructures.

Expert has carried on extensive characterization of the physical, electrical (doped and undoped), and chemical properties of semiconductor epitaxial layers, interfaces, quantum wells, and superlattices. This includes Hall effect, C-V, and I-V measurements, SIMS analysis, scanning and transmission electron microscopy, and optical characterization, including spectral analysis. He is extremely knowledgeable regarding dopants.


Year Degree Subject Institution
Year: 1975 Degree: PhD Subject: Electrical Engineering, Institution: University of Illinois
Year: 1973 Degree: MS Subject: Electrical Engineering, Institution: University of Illinois
Year: 1972 Degree: BS Subject: Electrical Engineering, Institution: University of Illinois

Work History

Years Employer Title Department
Years: 1982 to Present Employer: Undisclosed Title: Professor Department:
Available upon request.
Years Employer Title Department
Years: 1978 to 1982 Employer: Rockwell International Title: Department:
Available upon request.
Years Employer Title Department
Years: 1976 to 1978 Employer: Bell Laboratories Title: Department:
Available upon request.

Career Accomplishments

Associations / Societies
Expert is a Fellow of IEEE, APS, the Optical Society of America, and the American Association of Science.
Awards / Recognition
He won the IEEE LEOS William Streifer Scientific Achievement Award in. Expert was an IEEE LEOS Distinguished Lecturer and a J. Arthur Rank Prize Funds Lecturer. He was the recipient of a Beckman Research Award.
Publications and Patents Summary
Expert is presently Associate Editor of Photonics Technology Letters. He has authored or co-authored more than 300 technical papers and eight book chapters, given more than 50 invited presentations, and edited six special journal issues and conference proceedings.

Fields of Expertise

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