Intellex Acquires Expert by Big Village

We're thrilled to announce that Intellex has acquired Expert by Big Village, effective March 22, 2024. This strategic move enhances our capabilities and strengthens our commitment to delivering exceptional solutions to our customers.

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Expert Details

Optoelectronics, Semiconductors, Microwaves

ID: 715363 Delaware, USA

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INTEGRATED OPTICS; FIBER OPTICS. Expert has spent a majority of his recent career in the area of integrated optics, including both optical integrated circuits and optical fibers. He designed and fabricated integrated optic devices in both III-V materials and lithium niobate, and has investigated the potential of potassium titanyl phosphate (KTP) as a substrate material.

SEMICONDUCTOR LASER AND LIGHT-EMITTING DIODES (LED). Much of Expert's work has involved the design of specialized laser diodes and LEDs fabricated in III-V semiconductors, including tunable distributed feedback (DFB) lasers. His recent efforts have led to the development of light-emitting and detecting (LEAD) diodes that can function as lasers (or LEDs) when forward-biased and as photodiodes when reverse-biased.

PHOTONICS; OPTOELECTRONICS. Expert's area of expertise extends well beyond integrated optics to the general field of photonics or optoelectronics. He is currently working on electroabsorption modulators and metal-semiconductor-metal (MSM) photodetectors.

SEMICONDUCTOR DEVICES; FIELD-EFFECT TRANSISTOR; ACOUSTOOPIC MODULATOR. In addition to his specialization in photonics, Expert has in-depth experience in the design and fabrication of other semiconductor devices, including microwave field effect transistors, IMPATT diodes, Gunn diodes, Peltier cooling stages, and acousto-optic modulators. He is familiar with semiconductor processing techniques for silicon and III-V materials, including epitaxial growth, diffusion, and ion-implantation doping.

TIME-DOMAIN REFLECTOMETRY. Expert is experienced in the use of mircowave TDR techniques to detect and characterize corrosion in steel bridge support cables and reinforcing rods.


Year Degree Subject Institution
Year: 1967 Degree: PhD Subject: Applied Physics Institution: Cornell University
Year: 1963 Degree: MS Subject: Electrical Engineering Institution: Princeton University
Year: 1962 Degree: BS Subject: Electrical Engineering Institution: Drexel University

Work History

Years Employer Title Department
Years: 1976 to Present Employer: Undisclosed Title: Professor, Department:
Research, teaching, project management
Years Employer Title Department
Years: 1984 to 1985 Employer: Electrical Engineering, University of Delaware Title: Acting Chairperson, Department:
Department management, research, teaching
Years Employer Title Department
Years: 1967 to 1976 Employer: Hughes Research Laboratories Title: Member, Tech. Staff, Department:
Ion implantation doping research, microwave and optoelectronic devices development.
Years Employer Title Department
Years: 1975 to 1976 Employer: Electrical Engineering, USC Title: Instructor, Department:
Years Employer Title Department
Years: 1969 to 1976 Employer: Electrical Engineering, UCLA Title: Instructor, Department:

Career Accomplishments

Associations / Societies
IEEE (Fellow), OSA, SPIE
Publications and Patents Summary
He has over 100 publications,18 patents and 2 books in the area of semiconductor optoelectronic and microwave devices.

Fields of Expertise

acoustooptic modulator, electrooptics, fiber optics, field-effect transistor, integrated optics, integrated optoelectronics science, light-emitting diode, metal semiconductor field-effect transistor, optical fiber, optoelectronics science, photon, photonics technology, semiconductor device, semiconductor laser, time-domain reflectometry, light emitter, light-emitting diode switching speed, light-emitting diode rise time, electromagnetic radiation detection, aluminum gallium arsenide, discrete semiconductor device, metal-semiconductor-metal photodetector, lithium niobate, acoustooptic modulation, epitaxial silicon, III-V semiconductor material, electrooptic device, semiconductor material processing, molecular beam epitaxy, ion implantation, optical communication, electromagnetic radiation, semiconductor device analysis, photoconductive material, acoustooptics, gallium arsenide semiconductor, Gunn effect, photoconductive cell, Peltier effect, microwave frequency, microwave device, silicon diode, impact avalanche and transit time diode, trapped plasma avalanche transit time diode, photoelectric cell, optical lens, semiconductor ion implantation, waveguide, transit-time device, transistor, semiconductor material, semiconductor doping, semiconductor diode, radio frequency, pulsed laser, phototransistor, photosensor, photodiode, optics, optical waveguide, optical sensor, optical material, optical instrument, optical filter, optical element, optical coupling, microwave integrated circuit, laser, injection laser, infrared detector, Gunn oscillator, Gunn diode, Gunn device, gallium arsenide laser, field-effect device, optical fiber sensor, solid electric property, semiconductor diffusion, bipolar transistor, avalanche photodiode, avalanche diode

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