Expert Details
Bulk and Epitaxial Crystal Growth and Characterization, LED Characterization, and Metrology
ID: 739228
California, USA
Throughout his professional career, Expert developed a new experimental technique for the measurement of a growth angle during crystal growth from the melt; introduced in-situ scanning electron microscopy measurements of the nucleation and evolution of the ferroelectric domains in the incommensurate ferroelectrics; invented reduced pressure bulk GaN growth from the liquid phase and revealed advantages of the epitaxial deposition on self-faceted shaped crystals. His study of the AlN growth by hydride vapor phase epitaxy promoted the production of high-quality thick epitaxial layers on the off-oriented SiC substrates. Most recently, he has been working on developing the growth of non-polar and semi-polar III-nitrides, preferable for the green and red light-emitting diodes and lasers.
His works have been awarded prizes from Ioffe Institute in Russia and as innovation research projects from Federal agencies in the USA. The results of his works were presented in more than a hundred research papers, twenty international conferences, and sixteen patents.
Skills and Expertise:
Bulk and epitaxial crystal growth, CVD, Solid State Physics, Semiconductors Characterization: XRD, SEM, CV
More specifically: Bulk and epitaxial growth of sapphire, silicon carbide, gallium nitride, aluminum nitride, silicon, and germanium. Deep experience and understanding of XRD, SEM, and Hg-probe measurement.
Education
| Year | Degree | Subject | Institution |
|---|---|---|---|
| Year: 1980 | Degree: PhD | Subject: Solid State Physics | Institution: Ioffe Physical-Technical Institute, St. Petersburg, Russia |
| Year: 1979 | Degree: MS | Subject: Optoelectronics | Institution: LETI Electrical Engineering University, St. Petersburg, Russia |
Work History
| Years | Employer | Title | Department |
|---|---|---|---|
| Years: 2012 to Present | Employer: Undisclosed | Title: Senior scientist | Department: |
Responsibilities:XRD/SEM/CV characterization and epitaxial growth of III-Nitrides. LED characterization. |
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| Years | Employer | Title | Department |
| Years: 2008 to 2012 | Employer: Oxford Instruments | Title: Senior Electronics Engineer | Department: TDI |
Responsibilities:Epitaxial and quasi-bulk growth and XRD/SEM/CV characterization of III-Nitrides. |
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| Years | Employer | Title | Department |
| Years: 1999 to 2008 | Employer: Technologies and Devices International, Inc. | Title: Electronics Engineer | Department: |
Responsibilities:GaN, AlN, AlGaN HVPE quasi-bulk and epitaxial growth and XRD, SEM, and CV characterization. |
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| Years | Employer | Title | Department |
| Years: 1979 to 2000 | Employer: Ioffe Physical-Technical Institute | Title: Research Scientist, Senior Scientist | Department: Crystal Growth Research Center |
Responsibilities:Experimental and theoretical study of Czochralski and Stepanov/EFG crystal growth of semiconductors (Ge, Si, InSb), oxides (Al2O3), fluorides (LiF, CaF2), and ferroelectrics (NaNO2, LiNbO3). Development of the modified Stepanov/EFG process for the growth of single-domain incommensurate ferroelectrics. Introduction of the new experimental technique for measuring the contact growth angle. Introduction of a new experimental method for the in-situ SEM measurements of the ferroelectric domain nucleation and velocity of the domain walls.Group leader, bulk, and epitaxial growth of GaN and SiC from melt solutions. Invention, design, and implementation of LPE GaN growth technique at reduced pressure. |
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| Years | Employer | Title | Department |
| Years: 1996 to 1999 | Employer: Crystal Growth Research Center | Title: Senior Scientist | Department: |
Responsibilities:Group leader, bulk, and epitaxial growth of GaN and SiC from the melt solutions. Invention, design, and implementation of LPE GaN growth technique at reduced pressure. Study of the surface growth kinetics in container-free LPE SiC. |
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| Years | Employer | Title | Department |
| Years: 1997 to 1997 | Employer: Howard University | Title: Visiting Scientist | Department: |
Responsibilities:Joint US-Russia Program on LPE GaN crystals at reduced pressure. Installation and setting up a new growth system. |
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| Years | Employer | Title | Department |
| Years: 1994 to 1996 | Employer: CREE Research EED | Title: Senior Research Scientist | Department: |
Responsibilities:Invention, design, and development of the LPE process for micropipe elimination in SiC wafers. Working together with a team of engineers to design new growth equipment. |
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| Years | Employer | Title | Department |
| Years: 1991 to 1996 | Employer: State University of Railway Communications | Title: Adjunct Professor | Department: |
Responsibilities:Delivered lectures and practical sessions on general physics. |
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| Years | Employer | Title | Department |
| Years: 1991 to 1991 | Employer: Johann-Wolfgang-Goethe University | Title: Visiting Scientist | Department: Crystal Growth Lab, Frankfurt-on-Main |
Responsibilities:Introduction and testing of new low-temperature eutectic flux growth technique for Bi2Sr2CaCu2O8 high-temperature superconductor. Working together with a team of engineers to design a new growth system. |
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| Years | Employer | Title | Department |
| Years: 1976 to 1979 | Employer: LETI Electrical Engineering University | Title: Research Assistant | Department: |
Responsibilities:Theoretical study of the inversion temperature Hall effect in narrow band-gap semiconductors. |
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Government Experience
| Years | Agency | Role | Description |
|---|---|---|---|
| Years: 1999 to 2000 | Agency: Office of Naval Research | Role: Key specialist | Description: GaN Single Crystal Growth from Liquid Phase |
International Experience
| Years | Country / Region | Summary |
|---|---|---|
| Years: 1979 to 2000 | Country / Region: Russian Federation | Summary: Research Scientist at Ioffe Physical-Technical Institute Experimental and theoretical study of Czochralski and Stepanov/EFG crystal growth of semiconductors (Ge, Si, InSb), oxides (Al2O3), fluorides (LiF, CaF2), and ferroelectrics (NaNO2, LiNbO3). Development of the modified Stepanov/EFG process for the growth of single-domain incommensurate ferroelectrics. Introduction of the new experimental technique for the measurement of the contact growth angle. Introduction of the new experimental technique for the in-situ SEM measurements of the ferroelectric domain nucleation and velocity of the domain walls. |
Career Accomplishments
| Associations / Societies |
|---|
| Member of Material Research Society (MRS) 1996-2006 Member of the American Association for Crystal Growth (AACG) 2001-2008 |
| Licenses / Certifications |
|---|
| Certificate of Completion for the following SAS Training: JMP Software: Data Exploration. 2010. Silver Spring, MD Certificate of Completion for the following SAS Training: Design of Experiments. 2010. Silver Spring, MD |
| Awards / Recognition |
|---|
| Key person in three DOD’s SBIR contracts (3 years) Prizes of the Ioffe Institute Problem Council (2 years) Prize of the Department of Solid State Physics Young Scientist Prizes of the Shaped Crystal Laboratory (2 years) |
| Publications and Patents Summary |
|---|
| More than a hundred publications in peer-reviewed journals. 15 U.S. and international patents. |
Additional Experience
| Training / Seminars |
|---|
| The results of the research were reported at 12 International Conferences. Most of the reports were delivered as oral presentations. |
Language Skills
| Language | Proficiency |
|---|---|
| English | Fluent |
| Russian | Native |