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Engineer with a strong background in semiconductor materials, characterization, and process. Experienced compound materials, HEMPT, and solar cell development, manufacturing, and reliability. Strong background in epitaxial materials growth, device failure analysis, and process troubleshooting with hands-on most of the epitaxial growth and characterization techniques. Areas of expertise include solid-state and semiconductor materials AlN. GaN, SiC, GaAs, and AlGaAs, characterization, physical apparatus and measurements, statistical process control, and DOE. ASQ certified reliability engineer. Enjoy people and have excellent interpersonal talents.

Profile:
- EE with more than 20 years of semiconductor experience including Motorola and Intel, working on compound materials, epitaxial growth, PVD thin film deposition, materials characterization, and process optimization.
- Device and process improvements.
- Measurement and characterization equipment building, hardware and software setup. Hands-on metrology equipment (X-ray diffraction, ECV, Hall measurement, Auger, SEM, EDX, AFM, SIMS, ), electronic test equipment
- ASQ Certified Reliability Engineering with experience in CMOS and PVD reliability extensively gained at Motorola, Boeing, and Intel.
- Capable of semiconductor and vacuum equipment sustaining, and troubleshooting, including all, Tegal Endeavor, Eclipse PVD, ASM EPSILON and AMAT P5000, Centura, Endura, and Emcore/Veeco E-450 epi reactors
- Active player in 65nm and 45nm process technology introduction and front-end process integration,
- Extensively used DOE, SPC, and process capability improvement. Outstanding written and presentation skills. Meticulous documentation ability.
- Strong team player. Ability to think outside the box to apply past experiences to resolve issues.

Strong expertise with process development, process equipment, and thin-film material characterization for PVD poly-crystal (AlN, AlScN, Mo, Ti, Al), CVD epitaxial (Si, SiGe, GaAs, AlGaAs) and low-temperature PECVD amorphous SiO2. The work on process development, technology, and high-volume production was strongly supported by scientific background with two doctors of philosophy degrees: A ph.D. in electrical engineering from Arizona State University with a thesis defended in 2005, and Ph.D. in physics from Sofia University “St. Kliment Ohridski” with thesis defended in 1997. As a Lead Process Development Engineer at OEM group at Gilbert, Arizona (currently Plasma-Therm and Shallback) the expertise was built in PVD and CVD thin-film process development and characterization. The process equipment used was the Endeavor and Eclipse PVD systems to do process development of poly-crystalline piezo- materials deposition (AlN, AlScN) and metals (Mo, Ti, Al) for MEMS BAW and SAW filters and thin-film energy harvesting devices. The developed films were characterized by using XRD (Pilips MRD), AFM (Inova/Veeco), including stress and reflectivity measurement. The low-temperature P5000 PECVD SiO2 process was developed for hard and elastic low-temperature SiO2 as a top layer in surface acoustic devices (SAW) based on LiNd substrate. The work at Polar Semiconductor (Minneapolis) as a Lead Epitaxy Process Engineer was focused on epitaxial growth and characterization and process optimization for Si BiCMOS technology. The high volume manufacturing and process optimization were performed with ASM-EPSILON, AMAT CENTURA, and 150mm 7700 AMC for Si epitaxial growth. At Intel, the work on SiGe selective epitaxial growth and characterization was performed. The process optimization and troubleshooting was done with 300mm ASM and AMAT epi reactors. In line, epitaxial materials characterization was utilized with the BEDE Matrix XDR system and SIMS (CEMECA) systems. The expertise in development work with III-V and II-IV materials was obtained as a senior process engineer at Motorola (HEMT devices), product engineer at Boeing -Spectrolab (high-efficiency solar cells), and when working on the Ph.D. thesis at Arizona State University.