Expert Details
CMOS/CCD Image Sensor, Analog Design, High-speed IC, and RF
ID: 732666
Ohio, USA
Prior to joining the Ohio State University, Expert spent over 10 years in CMOS mixed-signal circuit design, praimarily in monolithic CMOS and ROIC imaging applications. From 2002 to 2003, he worked at Intel Corporation, Analog Design Center, in Chandler, AZ, evaluating and developing power management techniques for mobile applications.
In 2004, Expert joined present-day Aptina Imaging Corporation, where he worked for 3 years on the design and development of several CMOS image sensor products for the cellular phone market as a design engineer in the Mobile Image Sensor Group.
From 2007 to 2014, Expert worked at Forza Silicon Corporation, in Pasadena, CA, where he participated in various technical, business development and leadership roles to design and develop high-performance CMOS image sensors and ROICs for cinematography, medical, automotive, and defense camera system applications.
Expert has authored and co-authored 3 issued patents, 4 conference papers, and 2 pending patents.
Education
| Year | Degree | Subject | Institution |
|---|---|---|---|
| Year: 2014 | Degree: PhD (in progress) | Subject: High-Speed and RF IC | Institution: The Ohio State University |
| Year: 2003 | Degree: ME | Subject: Electrical Engineering | Institution: Northern Arizona University |
| Year: 2001 | Degree: BSEE | Subject: Electrical Engineering | Institution: Northern Arizona University |
Work History
| Years | Employer | Title | Department |
|---|---|---|---|
| Years: 2014 to 2016 | Employer: The Ohio State University | Title: Research Assistant | Department: Electroscience Lab |
Responsibilities:His responsibilities include the design and development of STAR communication system high-speed ADC, ONR funded BAA.Model and design of 2.667 GHz, 12-bit ADC in 8HP, 120 nm, Bi-CMOS process. |
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| Years | Employer | Title | Department |
| Years: 2007 to 2014 | Employer: Forza Silicon Corp | Title: Senior Design Engineer | Department: Image sensor design |
Responsibilities:Expert was a key member of technical staff participating on various capacities in the architecture, design, and characterization of high-performance CMOS image sensors and ROICs for cinematography, medical, automotive, and defense camera system applications. |
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| Years | Employer | Title | Department |
| Years: 2004 to 2007 | Employer: Micron Technology | Title: Analog Design Engineer | Department: Image sensor design |
Responsibilities:He conducted analog design projects for CMOS digital camera applications. Design blocks included schematicand layout of VDAC, class AB buffers, row driver and decoder for pixel readout, boosters, and ADC blocks. He wrote Ocean script to customize simulations post-processing, and assisting on top-level chip integration and simulations. |
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| Years | Employer | Title | Department |
| Years: 2002 to 2003 | Employer: Intel Corp | Title: Intern | Department: Analog Design Center |
Responsibilities:Expert handled power management chip development for switching voltage regulators and LDO including both system level (Verilog-A) and the transistor level design using Cadence ADE tools. |
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Career Accomplishments
| Associations / Societies |
|---|
| IEEE member |
| Licenses / Certifications |
|---|
| The 3-D Packaging Revolution Course, Threshold Systems, May 2012 Advanced CMOS Image Sensors Characterization Course: Albert J.P. Theuwissen 2012 Advanced CMOS Image Sensors Course: Albert J.P. Theuwissen 2010 CMOS Image Sensors Introduction Course: Albert J.P. Theuwissen 2008 Cadence Management Corp.: Project Management 05/13/05 & 11/02/2012 Mead Microelectronics: Low Voltage, Low Power Analog IC Design 03/27/06 |
| Publications and Patents Summary |
|---|
| Expert has authored or co-authored 2 issued patents, 4 conference papers, and 3 pending patents. |
Fields of Expertise
image sensor, high-speed camera, infrared imaging application, indium gallium arsenide phosphide laser diode, analog circuit, complementary metal-oxide semiconductor integrated circuit, bipolar complementary metal-oxide semiconductor technology, high-speed analog to digital conversion, radio frequency circuit