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Expert has expertise in many aspects of materials (including crystal) growth, characterization, and devices made from compound semiconductors, especially GaAs and related materials. This includes both liquid phase epitaxial growth and and metalorganic chemical vapor deposition of both optical and electronic devices made from GaAs, AlGaAs, InP, and InGaAsP. He is very familiar with epitaxial reactors.

Expert has an ongoing program on the development of MOCVD for the epitaxial growth of compound semiconducter binary, ternary, and quaternary layers for use in quantum well and supperlattice structures and devices. He has published extensively on reactor designs, the growth process itself, and on the electrical and chemical microcharacterization of the resulting structures and interfaces. He is also very knowledgeable of the broader field of chemical vapor deposition.

Much of Expert's research has involved various aspects of semiconductor injection laser and light-emitting diode development. This includes both infrared and visible lasers, pulsed and continuous lasers, high-power lasers and laser arrays, low-power high-performance lasers, and integrable lasers. He has also worked with gallium arsenide lasers. He is an expert on the physics of quantum well heterostructure lasers and strained layer lasers, and has extensive experience in the determination of laser diode reliability. He is also very knowledgeable regarding multiple quantum well lasers, and of buried heterostructures.

Expert has carried on extensive characterization of the physical, electrical (doped and undoped), and chemical properties of semiconductor epitaxial layers, interfaces, quantum wells, and superlattices. This includes Hall effect, C-V, and I-V measurements, SIMS analysis, scanning and transmission electron microscopy, and optical characterization, including spectral analysis. He is extremely knowledgeable regarding dopants.