Expert Details
CMOS/CCD Image Sensor and Analog Design
ID: 727021
Israel
Since he was involved in all aspects of camera development, he can contribute and complement the firm's team in detailed development of firm's camera and analog products.
The benefit of Expert as a CMOS Image Sensor Device and Analog Design Expert person includes:
1. Detailed technical knowledge of all aspects of CMOS Image Sensors and associated Analog Integrated Circuit Design comprising:
a. System specifications
b. Flow down specifications to the pixel and circuitry levels
c. Pixel circuit and layout design and CMOS Analog Design
d. Process flow
e. Electrical and optical testing and verification
2. A senior person who has worked both at a semiconductor fab foundry (Tower) and application oriented company (3DV Systems – now Microsoft). He understand all aspects of technical and administrative issues and procedures.
3. On-site negotiator for specs, delivery times and pricing
1.Design of VLSI CMOS signal processor chip for IR detector interface comprising low noise, low power buffered direct injection input opamp, integrator, voltage and current limiters, buffer amplifier, multiplexer readout circuitry and sample/hold circuits. Complete vertical design from system concept specifications through circuit design mask layout and tape out.
2.Develop Spice DC and Noise Characterization and modeling system including hardware for measuring and software for analysis. Initiated and implemented Vertical CAD Design System for VLSI circuit design including defining software and hardware products
Education
| Year | Degree | Subject | Institution |
|---|---|---|---|
| Year: 1975 | Degree: PhD | Subject: Electrical Engineering and Applied Physics | Institution: Case Western Reserve University |
| Year: 1971 | Degree: M.S. | Subject: Electrical Engineering | Institution: Technion-Israel Institute of Technology |
| Year: 1968 | Degree: B.S. | Subject: Electrical Engineering | Institution: Case Western Reserve University |
Work History
| Years | Employer | Title | Department |
|---|---|---|---|
| Years: 2005 to 2008 | Employer: 3DV Systems LTD (now Microsoft) | Title: CMOS Image Sensor Analog Design Manager | Department: VLSI Group |
Responsibilities:1. Developed a unique video imaging technology and camera for sensing distance in real-time between an imaging sensor and objects at high speed and high resolution mainly for gaming and computer interface applicationsCMOS Image Sensor and Analog Design ManagerMajor Responsibilities: 1. Developing small pixels and analog signal processing for a novel 3D all CMOS based Image Sensor for commercial applications. The concept is based on the Time-of-Flight (TOF) principle in the Near Infrared spectral region using innovating photon gating techniques The basic feature incorporates real- time depth imaging by capturing the shape of a light-pulse front as it is reflected from a three dimensional object. 2. Pixel device and process development employing TCAD tools· 3.Pixel physical design development and characterization using Cadence Virtuoso· 4. Analog design employing Cadence Analog Artist and Spectre simulation |
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| Years | Employer | Title | Department |
| Years: 2004 to 2005 | Employer: BlueBird Optical Mems LTD | Title: CMOS Image Sensor VLSI Design Manager | Department: VLSI Group |
Responsibilities:1. TDI Camera Design and Conceptual2. 3D Camera Development |
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| Years | Employer | Title | Department |
| Years: 2000 to 2004 | Employer: Tower Semiconductor | Title: CMOS Image Sensor & Analog Device Section Head | Department: Image Sensor Group |
Responsibilities:1. CMOS Image Sensor Pixel development of various photodetectors (Pinned Photo Diode) and pixel designs, analog circuit design, process development and characterization of 3-4 transistor pixels. The pixel sizes ranged from 5.6um to 2.7um on a side. (simulation and layout), electrical and optical characterization for 0.18u and 0.35u processes2. Process development including process simulation for unique photodiode process including spectral response, uniformity and dark current requirements· 3. Fully Flexible Open Architecture Characterization Vehicle Development· 4. Analog test vehicle development including CMOS, resistor, capacitor, bipolar matching: temperature, voltage and matching characterization for various process and layout configurations· 5. Analog circuit (BG Ref, ADC, Ring Oscillator and CBCM) simulation and characterization to verify component spice models |
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| Years | Employer | Title | Department |
| Years: 1989 to 2000 | Employer: SCD - Semiconductor Devices | Title: Senior Staff - VLSI Design Group & Project Management | Department: |
Responsibilities:1.Design of VLSI CMOS signal processor chip for IR detector interface comprising low noise, low power buffered direct injection input opamp, integrator, voltage and current limiters, buffer amplifier, multiplexer readout circuitry and sample/hold circuits. Complete vertical design from system concept specifications through circuit design mask layout and tape out.2.Develop Spice DC and Noise Characterization and modeling system including hardware for measuring and software for analysis. Initiated and implemented Vertical CAD Design System for VLSI circuit design including defining software and hardware products 3.Project Management including coordinating development of IR detector and performing detector and optical design |
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| Years | Employer | Title | Department |
| Years: 1987 to 1989 | Employer: Rockwell International: | Title: Manager - Device Engineering Group (25 engineers and scientists) | Department: Electro - Optical Center |
Responsibilities:A. CAD strategy planning and development·B. VLSI circuit design for Focal Plane Arrays· C. Device characterization· D Project management 1.Initiated and successfully implemented Vertical CAD Design System for VLSI circuit design including defining software and hardware products 2.Reduced design time and cost by a factor of 2 by optimizing resources comprising of personnel and optimizing CAD implementation 3.Project management including readout and multiplexer VLSI CMOS circuit design. |
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| Years | Employer | Title | Department |
| Years: 1980 to 1987 | Employer: Rafael - Armament Development Authority | Title: Manager - Device Processing Technology Section (18 engineers & technicians) | Department: SemiConductor Device Department |
Responsibilities:1. Successfully directed the process development, implementation and transfer to production of numerous infrared detector array programs. Specifically: device design, photolithography, material characterization, etching, chemical and vapor depositions, process development and optimization. 2. Developed, implemented and transfer to production planar process of IR detectors from prior mesa process, thereby increasing yield significantly and providing a roadmap to the fabrication of large matrix photodetector arrays. |
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| Years | Employer | Title | Department |
| Years: 1978 to 1980 | Employer: Rockwell International, Anaheim California | Title: Manager - Device Development Group (15 engineers) | Department: Focal Plane Development Department |
Responsibilities:A. Infrared and visible CCD imaging multiplexer designB. Process development and characterization. 1.Successfully managed numerous multiplexer and readout projects. 2.Developed CCD double polysilicon process using LOCOS process, thereby increasing yield and throughput. |
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| Years | Employer | Title | Department |
| Years: 1975 to 1978 | Employer: Hughes Aircraft Co., Newport Beach, CA | Title: Senior Member of Technical Staff | Department: Microelectronics Research Center |
Responsibilities:1. High density CCD Memory array design, process development and testing.2. 65k Memory:Device and architecture design including CAD layout, device simulation and mask procurement |
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Government Experience
| Years | Agency | Role | Description |
|---|---|---|---|
| Years: 1987 to 1989 | Agency: DARPA | Role: Image Sensor Design | Description: Manager of Device Engineering group at Rockwell International Electro-Optics Dept, Developing Infrared Image Sensors with readout electronics |
| Years: 1978 to 1980 | Agency: DARPA | Role: Readout electronics design for infrared sensors | Description: Manager of Device Development group at Rockwell International Electro-Optics Dept, Developing Infrared Image Sensors with readout electronics |
Career Accomplishments
| Associations / Societies |
|---|
| IEEE: Senior Member since April 17, 1999 |
| Publications and Patents Summary |
|---|
| He has over 20 publications in journals/reports and 1 patent application filed |
Additional Experience
| Training / Seminars |
|---|
| 1. CMOS Image Sensors:T. Expert presented CMOS Image Sensors Fundamentals 2. Advanced CMOS & BiCMOS VLSI Design:Practical Aspects in Analog & Mixed -Mode IC Design 3. ANALOG ARTIST: CadenceSchematic Editor and Simulation 4. VIRTUOSO:Cadence Layout Editor 5. UNIX:Basic |
| Other Relevant Experience |
|---|
| Lecturer: Course CMOS Analog Design at ORT Braude College, Carmiel Israel |
Fields of Expertise
3D imaging, active region, capacitor, CCD camera, charge carrier, charge density, charge transfer device, charge-coupled device, charge-storage diode, complementary metal-oxide semiconductor device, conservation of charge, Coulomb's law, electric charge, imaging, imaging system, infrared imaging, integrated circuit, junction capacitance, metal-oxide semiconductor device, photodiode array, semiconductor device, analog circuit design, integrated-circuit design, image sensor, complementary metal-oxide semiconductor integrated circuit, linear integrated circuit, metal-oxide-silicon capacitor, gate oxide, device physics, active region, active infrared detection system, very high-density integrated circuit, electron hole, charge density, charge carrier, analog signal processor, coulomb, infrared sensor, metal-insulator semiconductor integrated circuit, metal-oxide semiconductor field-effect transistor, metal-oxide semiconductor integrated circuit, circuit, semiconductor diode, metal-insulator semiconductor device, field-effect device, camera